BF 888 H6327

MANUFACTURER
Infineon Technologies
PRODUCT CATEGORY
RF Bipolar Transistors
Description
RF Bipolar Transistors RF BIP TRANSISTOR
1+
1.0920
10+
0.9072
100+
0.5523
1000+
0.4284
3000+
0.3654

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NEWICSHOP Sources
39% - we order from franchised distributor with lead time
35% - we order from stocking distributor
17% - OEM excess
9% - Order from MFG. directly
TOTAL      1.09
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Manufacturer :
Infineon Technologies
Product Category :
RF Bipolar Transistors
Collector- Emitter Voltage VCEO Max :
4 V
Configuration :
Single
Continuous Collector Current :
30 mA
DC Collector/Base Gain hfe Min :
250
Emitter- Base Voltage VEBO :
13 V
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Package / Case :
SOT-343
Packaging :
Reel
Part # Aliases :
Pd - Power Dissipation :
160 mW
Product Type :
RF Bipolar Transistors
Series :
BF888
Technology :
SI
Transistor Polarity :
NPN
Transistor Type :
Bipolar Power
Type :
RF Bipolar Power
Datasheet :
BF 888 H6327

Cross References

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Search Part Number: "BF 8" Included word is 15

Part Number Manufacturer Stock Description
BF 888 H6327 Infineon Technologies 0 RF Bipolar Transistors RF BIP TRANSISTOR

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