AFIC10275NR5

MANUFACTURER
NXP Semiconductors
PRODUCT CATEGORY
RF MOSFET Transistors
Description
RF MOSFET Transistors Airfast RF LDMOS Wideband Integrated Power Amplifier, 978-1090 MHz, 250 W Peak, 50 V
1+
486.5700
5+
474.8730
10+
463.0710
25+
456.5820
50+
456.5820

GET QUOTE

NEWICSHOP Sources
39% - we order from franchised distributor with lead time
35% - we order from stocking distributor
17% - OEM excess
9% - Order from MFG. directly
TOTAL      486.57
+ FREE SHIPPING - DETAILS
Price for 1

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Manufacturer :
NXP Semiconductors
Product Category :
RF MOSFET Transistors
Gain :
32.1 dB
Id - Continuous Drain Current :
1.6 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 40 C
Mounting Style :
SMD/SMT
Number of Channels :
1 Channel
Operating Frequency :
978 MHz to 1090 MHz
Output Power :
250 W
Package / Case :
TO-270WB-14
Packaging :
Reel
Part # Aliases :
Product Type :
RF MOSFET Transistors
Technology :
SI
Transistor Polarity :
N-Channel
Type :
RF Power MOSFET
Unit Weight :
Vds - Drain-Source Breakdown Voltage :
- 500 mV, 100 V
Vgs - Gate-Source Voltage :
- 6 V, 10 V
Vgs th - Gate-Source Threshold Voltage :
1.3 V
Datasheet :
AFIC10275NR5

Cross References

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    RF MOSFET Transistors 978-1090 MHz, 250 W Peak, 50 V
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    RF MOSFET Transistors Airfast RF Power Integrated Power Amplifier, 25 W Pulse over 2400-3100 MHz, 32 V
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    RF MOSFET Transistors Airfast RF Power Integrated Power Amplifier, 25 W Pulse over 2400-3100 MHz, 32 V
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  • NXP Semiconductors
    RF MOSFET Transistors 978-1090 MHz, 250 W Peak, 50 V
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    RF MOSFET Transistors Airfast RF LDMOS Wideband Integrated Power Amplifier, 978-1090 MHz, 250 W Peak, 50 V
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Search Part Number: "AFIC" Included word is 15

Part Number Manufacturer Stock Description
AFIC10275NR1 NXP Semiconductors 0 RF MOSFET Transistors 978-1090 MHz, 250 W Peak, 50 V
AFIC31025NR1 NXP Semiconductors 0 RF MOSFET Transistors Airfast RF Power Integrated Power Amplifier, 25 W Pulse over 2400-3100 MHz, 32 V
AFIC31025GNR1 NXP Semiconductors 0 RF MOSFET Transistors Airfast RF Power Integrated Power Amplifier, 25 W Pulse over 2400-3100 MHz, 32 V
AFIC10275GNR1 NXP Semiconductors 0 RF MOSFET Transistors 978-1090 MHz, 250 W Peak, 50 V
AFIC10275NR5 NXP Semiconductors 0 RF MOSFET Transistors Airfast RF LDMOS Wideband Integrated Power Amplifier, 978-1090 MHz, 250 W Peak, 50 V
AFIC31025GNR1 NXP Semiconductors 0 RF MOSFET Transistors Airfast RF Power Integrated Power Amplifier, 25 W Pulse over 2400-3100 MHz, 32 V
AFIC31025NR1 NXP Semiconductors 0 RF MOSFET Transistors Airfast RF Power Integrated Power Amplifier, 25 W Pulse over 2400-3100 MHz, 32 V
AFIC901N-135MHZ NXP Semiconductors 0 RF Development Tools AFIC901N 136-174 MHz Reference Circuit
AFIC901N-135MHZ NXP / Freescale 0 RF Amplifier AFIC901N-135MHZ
AFIC901N-350MHZ NXP Semiconductors 0 RF Development Tools AFIC901N 350-520 MHz Reference Circuit
AFIC901NT1 NXP Semiconductors 1,892 RF Amplifier Airfast RF LDMOS Wideband Integrated Power Amplifier, 1.8-1000 MHz, 30 dBm, 7.5 V
AFIC10275GNR1 NXP / Freescale 0 RF MOSFET Transistors 978-1090 MHz, 250 W Peak, 50 V
AFIC901N-760MHZ NXP Semiconductors 0 RF Development Tools AFIC901N 760-870 MHz Reference Circuit
AFIC901N-350MHZ NXP Semiconductors 0 RF Development Tools AFIC901N 350-520 MHz Reference Circuit
AFIC901NT1 NXP Semiconductors 1,892 RF Amplifier Airfast RF LDMOS Wideband Integrated Power Amplifier, 1.8-1000 MHz, 30 dBm, 7.5 V

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