BFU730LXZ

MANUFACTURER
NXP Semiconductors
PRODUCT CATEGORY
RF Bipolar Transistors
Description
RF Bipolar Transistors SiGe:C MMIC Transistor
1+
1.0290
10+
0.7707
100+
0.4179
1000+
0.3129
2500+
0.2709
10000+
0.2520
20000+
0.2310
50000+
0.2226
100000+
0.2142

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35% - we order from stocking distributor
17% - OEM excess
9% - Order from MFG. directly
TOTAL      1.03
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Manufacturer :
NXP Semiconductors
Product Category :
RF Bipolar Transistors
Collector- Emitter Voltage VCEO Max :
10 V
Configuration :
Single
Continuous Collector Current :
5 mA
DC Collector/Base Gain hfe Min :
205
Emitter- Base Voltage VEBO :
1.3 V
Maximum DC Collector Current :
30 mA
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 65 C
Mounting Style :
SMD/SMT
Operating Frequency :
53 GHz
Output Power :
11.7 dBm
Package / Case :
SOT-883C-3
Packaging :
Cut Tape
Part # Aliases :
Pd - Power Dissipation :
160 mW
Product Type :
RF Bipolar Transistors
Technology :
SiGe
Transistor Polarity :
NPN
Transistor Type :
Bipolar Wideband
Unit Weight :
Datasheet :
BFU730LXZ

Cross References

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Search Part Number: "BFU7" Included word is 15

Part Number Manufacturer Stock Description
BFU768F,115 NXP Semiconductors 5,284 RF Bipolar Transistors 4-pin Dual-Emitter Microwave Transistor
BFU760F,115 NXP Semiconductors 39,461 RF Bipolar Transistors NPN WIDEBAND SILICON GERMANIUM RF TRANS
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BFU768F,115 NXP Semiconductors 5,284 RF Bipolar Transistors 4-pin Dual-Emitter Microwave Transistor
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BFU730LXZ NXP Semiconductors 7,965 RF Bipolar Transistors SiGe:C MMIC Transistor
BFU730F,115 NXP Semiconductors 6,512 RF Bipolar Transistors NPN WIDEBAND SILICON GERMANIUM RF TRANS
BFU725F/N1,115 NXP Semiconductors 7,137 RF Bipolar Transistors 2.8V 0.04A 4-Pin Trans GP BJT NPN
BFU710F,115 NXP Semiconductors 5,298 RF Bipolar Transistors NPN WIDEBAND SILICON GERMANIUM RF TRANS
BFU760F,115 NXP Semiconductors 42,461 RF Bipolar Transistors NPN WIDEBAND SILICON GERMANIUM RF TRANS
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BFU725F/N1,115 NXP Semiconductors 7,137 RF Bipolar Transistors 2.8V 0.04A 4-Pin Trans GP BJT NPN

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