STGW25H120F2

MANUFACTURER
STMicroelectronics
PRODUCT CATEGORY
IGBT Transistors
Description
IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
1+
15.6030
10+
14.0910
25+
13.4400
100+
11.6760
250+
11.1510
500+
10.1640
1000+
8.8410
2500+
8.5260

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35% - we order from stocking distributor
17% - OEM excess
9% - Order from MFG. directly
TOTAL      15.60
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Manufacturer :
STMicroelectronics
Product Category :
IGBT Transistors
Collector- Emitter Voltage VCEO Max :
1200 V
Collector-Emitter Saturation Voltage :
2.1 V
Configuration :
Single
Continuous Collector Current at 25 C :
50 A
Continuous Collector Current Ic Max :
25 A
Gate-Emitter Leakage Current :
250 nA
Maximum Gate Emitter Voltage :
20 V
Maximum Operating Temperature :
+ 175 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
Package / Case :
TO-247-3
Packaging :
Tube
Pd - Power Dissipation :
375 W
Product Type :
IGBT Transistors
Series :
STGW25H120F2
Technology :
SI
Unit Weight :
Datasheet :
STGW25H120F2

Cross References

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