2SA1163-GRTE85LF

MANUFACTURER
Toshiba
PRODUCT CATEGORY
Bipolar Transistors - BJT
Description
Bipolar Transistors - BJT VCEO -120V Audio IC -100mA IB 10dB

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17% - OEM excess
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Manufacturer :
Toshiba
Product Category :
Bipolar Transistors - BJT
Collector- Base Voltage VCBO :
- 120 V
Collector- Emitter Voltage VCEO Max :
- 120 V
Collector-Emitter Saturation Voltage :
- 0.3 V
Configuration :
Single
Continuous Collector Current :
- 100 mA
DC Collector/Base Gain hfe Min :
200
DC Current Gain hFE Max :
700
Emitter- Base Voltage VEBO :
- 5 V
Gain Bandwidth Product fT :
100 MHz
Maximum DC Collector Current :
- 100 mA
Maximum Operating Temperature :
+ 125 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Package / Case :
SC-59-3
Packaging :
Reel
Pd - Power Dissipation :
150 mW
Product Type :
BJTs - Bipolar Transistors
Series :
2SA1163
Technology :
SI
Transistor Polarity :
PNP
Unit Weight :
Datasheet :
2SA1163-GRTE85LF

Cross References

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Search Part Number: "2SA1" Included word is 15

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2SA1362-GR(T5L,F,T Toshiba 0 Bipolar Transistors - BJT Bipolar Small-Signal Transistors
2SA1586SU-Y,LF Toshiba 0 Bipolar Transistors - BJT SM Sig PNP Trans VCEO -50V IC -150mA
2SA1971(TE12L,F) Toshiba 0 Bipolar Transistors - BJT PWR TRANS PW-MINI IC=-0.5A V=
2SA1201-Y-TP Micro Commercial Components (MCC) 0 Bipolar Transistors - BJT 3W,120V,ZENER,SMB Package
2SA1943-O(S1,F Toshiba 0 Bipolar Transistors - BJT PWR TRANS PC=150W
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