2SC2713-BL,LF

MANUFACTURER
Toshiba
PRODUCT CATEGORY
Bipolar Transistors - BJT
Description
Bipolar Transistors - BJT NPN Epitaxial Transistor
1+
0.7350
10+
0.4683
100+
0.1953
1000+
0.1344
3000+
0.1008
9000+
0.0861
24000+
0.0819
45000+
0.0756
99000+
0.0672

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17% - OEM excess
9% - Order from MFG. directly
TOTAL      0.74
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Manufacturer :
Toshiba
Product Category :
Bipolar Transistors - BJT
Collector- Base Voltage VCBO :
120 V
Collector- Emitter Voltage VCEO Max :
120 V
Collector-Emitter Saturation Voltage :
0.3 V
Configuration :
Single
Continuous Collector Current :
100 mA
DC Collector/Base Gain hfe Min :
200
DC Current Gain hFE Max :
700
Emitter- Base Voltage VEBO :
5 V
Gain Bandwidth Product fT :
100 MHz
Maximum Operating Temperature :
+ 125 C
Mounting Style :
SMD/SMT
Package / Case :
SOT-346-3
Packaging :
Reel
Pd - Power Dissipation :
150 mW
Product Type :
BJTs - Bipolar Transistors
Series :
2SC2713
Technology :
SI
Transistor Polarity :
NPN
Unit Weight :
Datasheet :
2SC2713-BL,LF

Cross References

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Search Part Number: "2SC2" Included word is 15

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