GT40QR21(STA1,E,D

MANUFACTURER
Toshiba
PRODUCT CATEGORY
IGBT Transistors
Description
IGBT Transistors LOW SATURATION/FAST SWITCHING
1+
2.8015
10+
2.2620
25+
2.0345
50+
1.8590
100+
1.8135
250+
1.6770
500+
1.4950
1000+
1.4040
2500+
1.2545

GET QUOTE

NEWICSHOP Sources
39% - we order from franchised distributor with lead time
35% - we order from stocking distributor
17% - OEM excess
9% - Order from MFG. directly
TOTAL      2.80
+ FREE SHIPPING - DETAILS
Price for 1

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Manufacturer :
Toshiba
Product Category :
IGBT Transistors
Collector- Emitter Voltage VCEO Max :
1200 V
Collector-Emitter Saturation Voltage :
1.5 V
Configuration :
Single
Continuous Collector Current at 25 C :
40 A
Continuous Collector Current Ic Max :
80 A
Gate-Emitter Leakage Current :
100 nA
Maximum Gate Emitter Voltage :
25 V
Maximum Operating Temperature :
+ 175 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
Package / Case :
TO-3PN-3
Packaging :
Tube
Pd - Power Dissipation :
230 W
Product Type :
IGBT Transistors
Series :
GT40QR21
Technology :
SI
Datasheet :
GT40QR21(STA1,E,D

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