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- Manufacturer :
- Toshiba
- Product Category :
- Bipolar Transistors - BJT
- Collector- Base Voltage VCBO :
- 60 V, - 50 V
- Collector- Emitter Voltage VCEO Max :
- 50 V
- Collector-Emitter Saturation Voltage :
- 100 mV
- Configuration :
- Dual
- DC Collector/Base Gain hfe Min :
- 120
- DC Current Gain hFE Max :
- 400
- Emitter- Base Voltage VEBO :
- 5 V
- Gain Bandwidth Product fT :
- 80 MHz, 80 MHz
- Maximum DC Collector Current :
- 150 mA
- Maximum Operating Temperature :
- + 150 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- SOT-563-6
- Packaging :
- Reel
- Pd - Power Dissipation :
- 100 mW
- Product Type :
- BJTs - Bipolar Transistors
- Series :
- HN1B04
- Technology :
- SI
- Transistor Polarity :
- NPN, PNP
- Unit Weight :
- Datasheet :
- HN1B04FE-GR,LF
Cross References
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Stock 8,169
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Stock 8,911
-
Stock 1,284
-
Stock 9,615
-
Stock 5,522
PEOPLE WHO BOUGHT Bipolar Transistors - BJT ALSO BOUGHT
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Central SemiconductorBipolar Transistors - BJT 300Vcbo 300Vceo 3.0Vebo 500mA 15WStock 0
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Stock 0
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Stock 0
PEOPLE VIEWING HN1B04FE-GR,LF THEN BOUGHT
-
Stock 3,030
-
ToshibaMotor / Motion / Ignition Controllers & Drivers 84V/3A 2 PH UNIPOLAR STEP MOTOR DRIVERStock 51
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Stock 0
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Stock 0
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Stock 0
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Search Part Number: "HN1B" Included word is 15
Part Number | Manufacturer | Stock | Description |
---|---|---|---|
HN1B04FU-Y,LF | Toshiba | 8,169 | Bipolar Transistors - BJT LF Transistor +/-.15A +/-50V |
HN1B01FU-GR,LF | Toshiba | 8,911 | Bipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp |
HN1B04FU-GR,LF | Toshiba | 1,284 | Bipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp |
HN1B04FE-Y,LF | Toshiba | 9,615 | Bipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp |
HN1B01F-GR(TE85L,F | Toshiba | 5,522 | Bipolar Transistors - BJT Dual Trans PNP x 2 SM6, -50V, -0.15A |
HN1B01FDW1T1G | ON Semiconductor | 6,255 | Bipolar Transistors - BJT 200mA 60V Dual Complementary |
HN1B01F-Y(TE85L,F) | Toshiba | 1,606 | Bipolar Transistors - BJT Dual Trans PNP x 2 SM6, -50V, -0.15A |
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