RN1306(TE85L,F)

MANUFACTURER
Toshiba
PRODUCT CATEGORY
Bipolar Transistors - Pre-Biased
Description
Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 4.7K x 47Kohms

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Manufacturer :
Toshiba
Product Category :
Bipolar Transistors - Pre-Biased
Collector- Emitter Voltage VCEO Max :
50 V
Configuration :
Single
Continuous Collector Current :
100 mA
DC Collector/Base Gain hfe Min :
80
DC Current Gain hFE Max :
80
Height :
0.9 mm
Length :
2 mm
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Package / Case :
USM-3
Packaging :
Reel
Pd - Power Dissipation :
100 mW
Peak DC Collector Current :
100 mA
Product Type :
BJTs - Bipolar Transistors - Pre-Biased
Series :
RN1306
Transistor Polarity :
NPN
Typical Input Resistor :
4.7 kOhms
Typical Resistor Ratio :
0.1
Width :
1.25 mm
Datasheet :
RN1306(TE85L,F)

Cross References

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Search Part Number: "RN13" Included word is 15

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