RN1704JE(TE85L,F)

MANUFACTURER
Toshiba
PRODUCT CATEGORY
Bipolar Transistors - Pre-Biased
Description
Bipolar Transistors - Pre-Biased ESV PLN (LF) TRANSISTOR Pd=200mW F=1MHz
1+
1.0290
10+
0.5754
100+
0.3087
500+
0.2457
1000+
0.1890
4000+
0.1428
8000+
0.1260
24000+
0.1197
48000+
0.1050

GET QUOTE

NEWICSHOP Sources
39% - we order from franchised distributor with lead time
35% - we order from stocking distributor
17% - OEM excess
9% - Order from MFG. directly
TOTAL      1.03
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Price for 1

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Manufacturer :
Toshiba
Product Category :
Bipolar Transistors - Pre-Biased
Channel Mode :
Enhancement
Collector- Emitter Voltage VCEO Max :
50 V
Configuration :
Dual
Continuous Collector Current :
100 mA
DC Collector/Base Gain hfe Min :
80
Emitter- Base Voltage VEBO :
10 V
Maximum DC Collector Current :
100 mA
Maximum Operating Frequency :
250 MHz
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Package / Case :
ESV-5
Packaging :
Cut Tape
Pd - Power Dissipation :
100 mW
Peak DC Collector Current :
100 mA
Product Type :
BJTs - Bipolar Transistors - Pre-Biased
Transistor Polarity :
NPN
Typical Input Resistor :
47 kOhms
Typical Resistor Ratio :
1
Datasheet :
RN1704JE(TE85L,F)

Cross References

  • Toshiba
    Bipolar Transistors - Pre-Biased NPN x 2 BRT, Q1BSR=22kOhm, Q1BER=22kOhm, Q2BSR=22kOhm, Q2BER=22kOhm, VCEO=50V, IC=0.1A
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  • Toshiba
    Bipolar Transistors - Pre-Biased ESV PLN (LF) TRANSISTOR Pd=200mW F=1MHz
    Stock 0
  • Toshiba
    Bipolar Transistors - Pre-Biased NPN x 2 BRT, Q1BSR=22kOhm, Q1BER=47kOhm, Q2BSR=22kOhm, Q2BER=47kOhm, VCEO=50V, IC=0.1A
    Stock 0
  • Toshiba
    Bipolar Transistors - Pre-Biased NPN x 2 BRT, Q1BSR=10kOhm, Q1BER=47kOhm, Q2BSR=10kOhm, Q2BER=47kOhm, VCEO=50V, IC=0.1A
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  • Toshiba
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Search Part Number: "RN17" Included word is 15

Part Number Manufacturer Stock Description
RN1703,LF Toshiba 0 Bipolar Transistors - Pre-Biased NPN x 2 BRT, Q1BSR=22kOhm, Q1BER=22kOhm, Q2BSR=22kOhm, Q2BER=22kOhm, VCEO=50V, IC=0.1A
RN1703JE(TE85L,F) Toshiba 0 Bipolar Transistors - Pre-Biased ESV PLN (LF) TRANSISTOR Pd=200mW F=1MHz
RN1708,LF Toshiba 0 Bipolar Transistors - Pre-Biased NPN x 2 BRT, Q1BSR=22kOhm, Q1BER=47kOhm, Q2BSR=22kOhm, Q2BER=47kOhm, VCEO=50V, IC=0.1A
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RN1705JE(TE85L,F) Toshiba 0 Bipolar Transistors - Pre-Biased ESV PLN (LF) TRANSISTOR Pd=200mW F=1MHz
RN1704,LF Toshiba 3,000 Bipolar Transistors - Pre-Biased NPN x 2 BRT, Q1BSR=47kOhm, Q1BER=47kOhm, Q2BSR=47kOhm, Q2BER=47kOhm, VCEO=50V, IC=0.1A
RN1709,LF Toshiba 3,000 Bipolar Transistors - Pre-Biased NPN x 2 BRT, Q1BSR=47kOhm, Q1BER=22kOhm, Q2BSR=47kOhm, Q2BER=22kOhm, VCEO=50V, IC=0.1A
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