RN2713JE(TE85L,F)

MANUFACTURER
Toshiba
PRODUCT CATEGORY
Bipolar Transistors - Pre-Biased
Description
Bipolar Transistors - Pre-Biased ESV PLN (LF) TRANSISTOR Pd=200mW F=1MHz
1+
0.2730
10+
0.1554
100+
0.0832
500+
0.0663
1000+
0.0507
4000+
0.0384
8000+
0.0345
24000+
0.0319
48000+
0.0286

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NEWICSHOP Sources
39% - we order from franchised distributor with lead time
35% - we order from stocking distributor
17% - OEM excess
9% - Order from MFG. directly
TOTAL      0.27
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Manufacturer :
Toshiba
Product Category :
Bipolar Transistors - Pre-Biased
Channel Mode :
Enhancement
Collector- Emitter Voltage VCEO Max :
- 50 V
Configuration :
Dual
Continuous Collector Current :
- 100 mA
DC Collector/Base Gain hfe Min :
120
Emitter- Base Voltage VEBO :
- 5 V
Maximum DC Collector Current :
- 100 mA
Maximum Operating Frequency :
200 MHz
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Package / Case :
ESV-5
Packaging :
Cut Tape
Pd - Power Dissipation :
100 mW
Peak DC Collector Current :
- 100 mA
Product Type :
BJTs - Bipolar Transistors - Pre-Biased
Transistor Polarity :
PNP
Typical Input Resistor :
22 kOhms
Datasheet :
RN2713JE(TE85L,F)

Cross References

  • Toshiba
    Bipolar Transistors - Pre-Biased PNP x 2 BRT, Q1BSR=10kOhm, Q1BER=47kOhm, Q2BSR=10kOhm, Q2BER=47kOhm, VCEO=-50V, IC=-0.1A
    Stock 0
  • Toshiba
    Bipolar Transistors - Pre-Biased PNP x 2 BRT, Q1BSR=4.7kOhm, Q1BER=47kOhm, Q2BSR=4.7kOhm, Q2BER=47kOhm, VCEO=-50V, IC=-0.1A
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    Stock 3,000
  • Toshiba
    Bipolar Transistors - Pre-Biased PNP x 2 BRT, Q1BSR=22kOhm, Q1BER=47kOhm, Q2BSR=22kOhm, Q2BER=47kOhm, VCEO=-50V, IC=-0.1A
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Search Part Number: "RN27" Included word is 15

Part Number Manufacturer Stock Description
RN2707,LF Toshiba 0 Bipolar Transistors - Pre-Biased PNP x 2 BRT, Q1BSR=10kOhm, Q1BER=47kOhm, Q2BSR=10kOhm, Q2BER=47kOhm, VCEO=-50V, IC=-0.1A
RN2706,LF Toshiba 3,000 Bipolar Transistors - Pre-Biased PNP x 2 BRT, Q1BSR=4.7kOhm, Q1BER=47kOhm, Q2BSR=4.7kOhm, Q2BER=47kOhm, VCEO=-50V, IC=-0.1A
RN2702TE85LF Toshiba 0 Bipolar Transistors - Pre-Biased BRT PNP 2-in-1 Ic -100mA -50V VCEO
RN2702,LF Toshiba 3,000 Bipolar Transistors - Pre-Biased TRANSISTOR PNP x 2 BRT, Q1BSR=10kOhm, Q1BER=10kOhm, Q2BSR=10kOhm, Q2BER=10kOhm, VCEO=-50V, IC=-0.1A
RN2709,LF Toshiba 0 Bipolar Transistors - Pre-Biased PNP x 2 BRT, Q1BSR=22kOhm, Q1BER=47kOhm, Q2BSR=22kOhm, Q2BER=47kOhm, VCEO=-50V, IC=-0.1A
RN2704JE(TE85L,F) Toshiba 0 Bipolar Transistors - Pre-Biased ESV PLN (LF) TRANSISTOR Pd=200mW F=1MHz
RN2708JE(TE85L,F) Toshiba 0 Bipolar Transistors - Pre-Biased ESV PLN (LF) TRANSISTOR Pd=200mW F=1MHz
RN2711(TE85L,F) Toshiba 3,000 Bipolar Transistors - Pre-Biased BRT PNP 2-in-1 Ic -100mA -50V VCEO
RN2705JE(TE85L,F) Toshiba 0 Bipolar Transistors - Pre-Biased ESV PLN (LF) TRANSISTOR Pd=200mW F=1MHz
RN2714,LF Toshiba 3,000 Bipolar Transistors - Pre-Biased PNP x 2 BRT, Q1BSR=1kOhm, Q1BER=10kOhm, Q2BSR=1kOhm, Q2BER=10kOhm, VCEO=-50V, IC=-0.1A
RN2701,LF Toshiba 3,000 Bipolar Transistors - Pre-Biased PNP x 2 BRT, Q1BSR=4.7kOhm, Q1BER=4.7kOhm, Q2BSR=4.7kOhm, Q2BER=4.7kOhm, VCEO=-50V, IC=-0.1A
RN2705,LF Toshiba 3,000 Bipolar Transistors - Pre-Biased PNP x 2 BRT, Q1BSR=2.2kOhm, Q1BER=47kOhm, Q2BSR=2.2kOhm, Q2BER=47kOhm, VCEO=-50V, IC=-0.1A
RN2708,LF Toshiba 0 Bipolar Transistors - Pre-Biased PNP x 2 BRT, Q1BSR=10kOhm, Q1BER=47kOhm, Q2BSR=10kOhm, Q2BER=47kOhm, VCEO=-50V, IC=-0.1A
RN2704,LF Toshiba 0 Bipolar Transistors - Pre-Biased PNP x 2 BRT, Q1BSR=22kOhm, Q1BER=22kOhm, Q2BSR=22kOhm, Q2BER=22kOhm, VCEO=-50V, IC=-0.1A
RN2710,LF Toshiba 3,000 Bipolar Transistors - Pre-Biased PNP x 2 BRT, Q1BSR=47kOhm, Q1BER=22kOhm, Q2BSR=47kOhm, Q2BER=22kOhm, VCEO=-50V, IC=-0.1A

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