RN4985FE,LF(CT

MANUFACTURER
Toshiba
PRODUCT CATEGORY
Bipolar Transistors - Pre-Biased
Description
Bipolar Transistors - Pre-Biased NPN + PNP BRT, Q1BSR=2.2kOhm, Q1BER=47kOhm, Q2BSR=2.2kOhm, Q2BER=47kOhm, VCEO=50V, IC=0.1A
1+
0.2900
10+
0.2430
100+
0.1030
1000+
0.0580
4000+
0.0430
8000+
0.0370
24000+
0.0340
48000+
0.0300
100000+
0.0250

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17% - OEM excess
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TOTAL      0.29
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Manufacturer :
Toshiba
Product Category :
Bipolar Transistors - Pre-Biased
Collector- Base Voltage VCBO :
- 50 V, 50 V
Collector- Emitter Voltage VCEO Max :
- 50 V, 50 V
Configuration :
Dual
DC Collector/Base Gain hfe Min :
80
Emitter- Base Voltage VEBO :
- 5 V, 5 V
Maximum DC Collector Current :
- 100 mA, 100 mA
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Package / Case :
ES-6
Packaging :
Reel
Pd - Power Dissipation :
100 mW
Product Type :
BJTs - Bipolar Transistors - Pre-Biased
Series :
RN4985
Transistor Polarity :
NPN, PNP
Datasheet :
RN4985FE,LF(CT

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