TK12Q60W,S1VQ

MANUFACTURER
Toshiba
PRODUCT CATEGORY
MOSFET
Description
MOSFET DTMOSIV 600V 340mOhm 11.5A 100W 890pF
1+
4.4940
10+
3.6330
100+
3.2550
500+
2.5410
1000+
2.1000
2500+
1.9551
5000+
1.8816
10000+
1.6359

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NEWICSHOP Sources
39% - we order from franchised distributor with lead time
35% - we order from stocking distributor
17% - OEM excess
9% - Order from MFG. directly
TOTAL      4.49
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Price for 1

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Manufacturer :
Toshiba
Product Category :
MOSFET
Configuration :
Single
Fall Time :
5.5 ns
Height :
6.1 mm
Id - Continuous Drain Current :
11.5 A
Length :
6.65 mm
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
Number of Channels :
1 Channel
Package / Case :
TO-251-3
Packaging :
Reel
Pd - Power Dissipation :
100 W
Product Type :
MOSFET
Qg - Gate Charge :
25 nC
Rds On - Drain-Source Resistance :
265 mOhms
Rise Time :
23 ns
Series :
TK12Q60W
Technology :
SI
Tradename :
DTMOSIV
Transistor Polarity :
N-Channel
Transistor Type :
1 N-Channel
Typical Turn-Off Delay Time :
85 ns
Typical Turn-On Delay Time :
45 ns
Unit Weight :
Vds - Drain-Source Breakdown Voltage :
600 V
Vgs - Gate-Source Voltage :
30 V
Vgs th - Gate-Source Threshold Voltage :
3.7 V
Width :
2.3 mm
Datasheet :
TK12Q60W,S1VQ

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Search Part Number: "TK12" Included word is 15

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