TK28V65W,LQ

Manufacturer :

Toshiba

Product Category :

MOSFET

Channel Mode :

Enhancement

Configuration :

Single

Fall Time :

7 ns

Id - Continuous Drain Current :

27.6 A

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

SMD/SMT

Number of Channels :

1 Channel

Package / Case :

DFN-5

Packaging :

Cut Tape

Pd - Power Dissipation :

240 W

Product Type :

MOSFET

Qg - Gate Charge :

75 nC

Rds On - Drain-Source Resistance :

120 mOhms

Rise Time :

25 ns

Series :

TK28E65W

Technology :

SI

Tradename :

DTMOSIV

Transistor Polarity :

N-Channel

Transistor Type :

1 N-Channel

Typical Turn-Off Delay Time :

130 ns

Typical Turn-On Delay Time :

60 ns

Vds - Drain-Source Breakdown Voltage :

650 V

Vgs - Gate-Source Voltage :

30 V

Vgs th - Gate-Source Threshold Voltage :

3.5 V