TK31E60W,S1VX

Manufacturer :

Toshiba

Product Category :

MOSFET

Channel Mode :

Enhancement

Configuration :

Single

Fall Time :

8.5 ns

Height :

15.1 mm

Id - Continuous Drain Current :

30.8 A

Length :

10.16 mm

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

Through Hole

Number of Channels :

1 Channel

Package / Case :

TO-220-3

Pd - Power Dissipation :

230 W

Product Type :

MOSFET

Qg - Gate Charge :

86 nC

Rds On - Drain-Source Resistance :

73 mOhms

Rise Time :

32 ns

Series :

TK31E60W

Technology :

SI

Tradename :

DTMOSIV

Transistor Polarity :

N-Channel

Transistor Type :

1 N-Channel

Typical Turn-Off Delay Time :

165 ns

Typical Turn-On Delay Time :

70 ns

Unit Weight :

Vds - Drain-Source Breakdown Voltage :

600 V

Vgs - Gate-Source Voltage :

30 V

Vgs th - Gate-Source Threshold Voltage :

3.7 V

Width :

4.45 mm