TK39N60X,S1F

MANUFACTURER
Toshiba
PRODUCT CATEGORY
MOSFET
Description
MOSFET DTMOSIV-H/S 600V 65mOhmmax(VGS=10V)
1+
6.5600
10+
5.9100
25+
5.3800
100+
4.8600
250+
4.4600
500+
4.0700
1000+
3.5500
2500+
3.4200

80 PARTS: SHIPS TODAY

NEWICSHOP Sources
39% - we order from franchised distributor with lead time
35% - we order from stocking distributor
17% - OEM excess
9% - Order from MFG. directly
TOTAL      6.56
+ FREE SHIPPING - DETAILS
Price for 1

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Manufacturer :
Toshiba
Product Category :
MOSFET
Channel Mode :
Enhancement
Configuration :
Single
Fall Time :
6 ns
Forward Transconductance - Min :
-
Height :
20.95 mm
Id - Continuous Drain Current :
38.8 A
Length :
15.94 mm
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
Number of Channels :
1 Channel
Package / Case :
TO-247-3
Pd - Power Dissipation :
270 W
Product Type :
MOSFET
Qg - Gate Charge :
85 nC
Rds On - Drain-Source Resistance :
55 mOhms
Rise Time :
35 ns
Series :
TK39N60X
Technology :
SI
Tradename :
DTMOSIV-H
Transistor Polarity :
N-Channel
Transistor Type :
1 N-Channel
Typical Turn-Off Delay Time :
155 ns
Typical Turn-On Delay Time :
60 ns
Unit Weight :
Vds - Drain-Source Breakdown Voltage :
600 V
Vgs - Gate-Source Voltage :
30 V
Vgs th - Gate-Source Threshold Voltage :
3.5 V
Width :
5.02 mm
Datasheet :
TK39N60X,S1F

Cross References

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Search Part Number: "TK39" Included word is 15

Part Number Manufacturer Stock Description
TK39J60W5,S1VQ Toshiba 72 MOSFET N-Ch 38.8A 270W FET 600V 4100pF 135nC
TK39N60W,S1VF Toshiba 39 MOSFET DTMOSIV 600V 65mOhm 38.8A 270W 4100pF
TK39A60W,S4VX Toshiba 17 MOSFET N-Ch DTMOSIV 600 V 50W 4100pF 38.8A
TK39N60W5,S1VF Toshiba 2,637 MOSFET Power MOSFET N-Channel
TK39J60W,S1VQ Toshiba 365 MOSFET N-Ch 38.8A 270W FET 600V 4100pF 110nC

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