TK49N65W,S1F

Manufacturer :

Toshiba

Product Category :

MOSFET

Channel Mode :

Enhancement

Configuration :

Single

Fall Time :

10 ns

Height :

20.95 mm

Id - Continuous Drain Current :

49.2 A

Length :

15.94 mm

Maximum Operating Temperature :

+ 150 C

Mounting Style :

Through Hole

Number of Channels :

1 Channel

Package / Case :

TO-247-3

Packaging :

Tube

Pd - Power Dissipation :

400 W

Product Type :

MOSFET

Qg - Gate Charge :

160 nC

Rds On - Drain-Source Resistance :

55 mOhms

Rise Time :

70 ns

Series :

TK49N65W

Technology :

SI

Transistor Polarity :

N-Channel

Unit Weight :

Vds - Drain-Source Breakdown Voltage :

650 V

Vgs - Gate-Source Voltage :

30 V

Vgs th - Gate-Source Threshold Voltage :

2.5 V

Width :

5.02 mm