TPN11003NL,LQ

MANUFACTURER
Toshiba
PRODUCT CATEGORY
MOSFET
Description
MOSFET N-Ch DTMOS VII-H 19W 510pF 31A 30V
1+
0.4095
10+
0.3146
100+
0.2028
1000+
0.1625
3000+
0.1372
9000+
0.1320
24000+
0.1268
45000+
0.1248

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35% - we order from stocking distributor
17% - OEM excess
9% - Order from MFG. directly
TOTAL      0.41
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Manufacturer :
Toshiba
Product Category :
MOSFET
Channel Mode :
Enhancement
Configuration :
Single
Fall Time :
1.9 ns
Height :
0.85 mm
Id - Continuous Drain Current :
31 A
Length :
3.1 mm
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Number of Channels :
1 Channel
Package / Case :
TSON-Advance-8
Packaging :
Reel
Pd - Power Dissipation :
19 W
Product Type :
MOSFET
Qg - Gate Charge :
7.5 nC
Rds On - Drain-Source Resistance :
12.6 mOhms
Rise Time :
2.1 ns
Series :
TPN11003NL
Technology :
SI
Tradename :
U-MOSVIII-H
Transistor Polarity :
N-Channel
Transistor Type :
1 N-Channel
Typical Turn-Off Delay Time :
14 ns
Typical Turn-On Delay Time :
7.5 ns
Unit Weight :
Vds - Drain-Source Breakdown Voltage :
30 V
Vgs - Gate-Source Voltage :
20 V
Vgs th - Gate-Source Threshold Voltage :
2.3 V
Width :
3.1 mm
Datasheet :
TPN11003NL,LQ

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TPN14006NH,L1Q Toshiba 0 MOSFET N-Ch 60V 1000pF 15nC 13.9mOhm 33A 30W
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