TTA004B,Q

MANUFACTURER
Toshiba
PRODUCT CATEGORY
Bipolar Transistors - BJT
Description
Bipolar Transistors - BJT PNP -2.5A 1.5W 280 HFE -0.5V Trans
1+
1.0290
10+
0.7602
100+
0.4788
1000+
0.3591
2500+
0.3045
10000+
0.2856
25000+
0.2688
50000+
0.2625

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39% - we order from franchised distributor with lead time
35% - we order from stocking distributor
17% - OEM excess
9% - Order from MFG. directly
TOTAL      1.03
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Price for 1

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Manufacturer :
Toshiba
Product Category :
Bipolar Transistors - BJT
Collector- Base Voltage VCBO :
- 160 V
Collector- Emitter Voltage VCEO Max :
- 160 V
Collector-Emitter Saturation Voltage :
- 500 mV
Configuration :
Single
Continuous Collector Current :
- 1.5 A
DC Collector/Base Gain hfe Min :
140
DC Current Gain hFE Max :
280
Emitter- Base Voltage VEBO :
- 6 V
Gain Bandwidth Product fT :
100 MHz
Maximum DC Collector Current :
- 1.5 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
Package / Case :
TO-126N-3
Pd - Power Dissipation :
1.5 W
Product Type :
BJTs - Bipolar Transistors
Series :
TTA004B
Technology :
SI
Transistor Polarity :
PNP
Unit Weight :
Datasheet :
TTA004B,Q

Cross References

  • Toshiba
    Bipolar Transistors - BJT PWR TRANS TO-126 PC=10W F=1M
    Stock 0
  • Toshiba
    Bipolar Transistors - BJT PWR TRANS TO-126N PC=10W F=1
    Stock 0
  • Toshiba
    Bipolar Transistors - BJT BJT PNP -18A 180W 80 HFE -2V Trans
    Stock 192
  • Toshiba
    Bipolar Transistors - BJT PNP -80V 10W 100MHz 200 hFE
    Stock 1,715

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Search Part Number: "TTA0" Included word is 15

Part Number Manufacturer Stock Description
TTA008B,Q Toshiba 0 Bipolar Transistors - BJT PWR TRANS TO-126 PC=10W F=1M
TTA006B,Q Toshiba 0 Bipolar Transistors - BJT PWR TRANS TO-126N PC=10W F=1
TTA0002(Q) Toshiba 192 Bipolar Transistors - BJT BJT PNP -18A 180W 80 HFE -2V Trans
TTA003,L1NQ(O Toshiba 1,715 Bipolar Transistors - BJT PNP -80V 10W 100MHz 200 hFE

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