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- Manufacturer :
- Toshiba
- Product Category :
- Bipolar Transistors - BJT
- Collector- Base Voltage VCBO :
- - 160 V
- Collector- Emitter Voltage VCEO Max :
- - 160 V
- Collector-Emitter Saturation Voltage :
- - 500 mV
- Configuration :
- Single
- Continuous Collector Current :
- - 1.5 A
- DC Collector/Base Gain hfe Min :
- 140
- DC Current Gain hFE Max :
- 280
- Emitter- Base Voltage VEBO :
- - 6 V
- Gain Bandwidth Product fT :
- 100 MHz
- Maximum DC Collector Current :
- - 1.5 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Package / Case :
- TO-126N-3
- Pd - Power Dissipation :
- 1.5 W
- Product Type :
- BJTs - Bipolar Transistors
- Series :
- TTA004B
- Technology :
- SI
- Transistor Polarity :
- PNP
- Unit Weight :
- Datasheet :
- TTA004B,Q
Cross References
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Stock 0
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Stock 0
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Stock 192
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Stock 1,715
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Central SemiconductorBipolar Transistors - BJT PNP 40Vcbo 40Vceo 5.0Vebo 200mA 2.0WStock 0
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Central SemiconductorBipolar Transistors - BJT 300Vcbo 300Vceo 3.0Vebo 500mA 15WStock 0
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PEOPLE VIEWING TTA004B,Q THEN BOUGHT
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ToshibaMotor / Motion / Ignition Controllers & Drivers 84V/3A 2 PH UNIPOLAR STEP MOTOR DRIVERStock 51
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Lastest News
03/11/2019
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Search Part Number: "TTA0" Included word is 15
Part Number | Manufacturer | Stock | Description |
---|---|---|---|
TTA008B,Q | Toshiba | 0 | Bipolar Transistors - BJT PWR TRANS TO-126 PC=10W F=1M |
TTA006B,Q | Toshiba | 0 | Bipolar Transistors - BJT PWR TRANS TO-126N PC=10W F=1 |
TTA0002(Q) | Toshiba | 192 | Bipolar Transistors - BJT BJT PNP -18A 180W 80 HFE -2V Trans |
TTA003,L1NQ(O | Toshiba | 1,715 | Bipolar Transistors - BJT PNP -80V 10W 100MHz 200 hFE |
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