TTA008B,Q

MANUFACTURER
Toshiba
PRODUCT CATEGORY
Bipolar Transistors - BJT
Description
Bipolar Transistors - BJT PWR TRANS TO-126 PC=10W F=1M
1+
1.4910
10+
1.1025
100+
0.8190
500+
0.6930
1000+
0.5355
2500+
0.4872
5000+
0.4557
10000+
0.4347
25000+
0.4242

GET QUOTE

NEWICSHOP Sources
39% - we order from franchised distributor with lead time
35% - we order from stocking distributor
17% - OEM excess
9% - Order from MFG. directly
TOTAL      1.49
+ FREE SHIPPING - DETAILS
Price for 1

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Manufacturer :
Toshiba
Product Category :
Bipolar Transistors - BJT
Collector- Base Voltage VCBO :
- 80 V
Collector- Emitter Voltage VCEO Max :
- 80 V
Collector-Emitter Saturation Voltage :
- 0.3 V
Configuration :
Single
Continuous Collector Current :
- 2 A
DC Collector/Base Gain hfe Min :
100
DC Current Gain hFE Max :
200
Emitter- Base Voltage VEBO :
- 7 V
Maximum DC Collector Current :
- 4 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
Package / Case :
TO-126N-3
Packaging :
Tray
Pd - Power Dissipation :
1.5 W
Product Type :
BJTs - Bipolar Transistors
Series :
TTA008B
Technology :
SI
Transistor Polarity :
PNP
Datasheet :
TTA008B,Q

Cross References

  • Toshiba
    Bipolar Transistors - BJT PNP -2.5A 1.5W 280 HFE -0.5V Trans
    Stock 2,059
  • Toshiba
    Bipolar Transistors - BJT PWR TRANS TO-126N PC=10W F=1
    Stock 0
  • Toshiba
    Bipolar Transistors - BJT BJT PNP -18A 180W 80 HFE -2V Trans
    Stock 192
  • Toshiba
    Bipolar Transistors - BJT PNP -80V 10W 100MHz 200 hFE
    Stock 1,715

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Search Part Number: "TTA0" Included word is 15

Part Number Manufacturer Stock Description
TTA004B,Q Toshiba 2,059 Bipolar Transistors - BJT PNP -2.5A 1.5W 280 HFE -0.5V Trans
TTA006B,Q Toshiba 0 Bipolar Transistors - BJT PWR TRANS TO-126N PC=10W F=1
TTA0002(Q) Toshiba 192 Bipolar Transistors - BJT BJT PNP -18A 180W 80 HFE -2V Trans
TTA003,L1NQ(O Toshiba 1,715 Bipolar Transistors - BJT PNP -80V 10W 100MHz 200 hFE

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